| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of stable high power operation with fully suppressed optical defects. SOLUTION: In an active layer 8 having a quantum well structure, GaInP mutual diffusion accelerating layers 8b, 8f having wider band gaps than those of an upper and lower GaInAsP light confining layers 8a, 8g are formed between a GaInAs quantum well layer 8d and the upper and lower GaInAsP light confining layers 8a, 8g, and ion implantion process and annealing process are conducted to make the GaInAs quantum well layer 8d and the GaInP mutual diffusion accelerating layers 8b, 8f in the form of mixed crystals at prescribed regions due to mutual diffusion in a semiconductor laser manufacturing process, thereby heightening the band gap augmenting effect, compared with making the quantum well layer and the light confining layers in the form of mixed crystals in prior art. Thus, formation of an effective window structure is made possible.
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