发明名称 ALUMINUM ALLOY FOR VACUUM DEVICE AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To obtain an alloy which is optimum for the production of vacuum devices and vacuum parts for semiconductors, electronics parts and accelerators or for studies or the like of superhigh, ultrahigh, high and low vacuum by forming a uniform and dense surface oxidized layer having specified or smaller thickness on the surface of an alloy. SOLUTION: This alloy is obtd. by forming a uniform and dense surface oxidized layer of <=10 nm thickness on the surface of an aluminum alloy. The surface oxidized layer is formed by oxidation treatment with an acid liquid comprising phosphoric acid, nitric acid and water. Preferably, the surface of the aluminum alloy is oxidized with the acid liquid and then cleaned with water to form the uniform and dense surface oxidized layer of <=10 nm thickness on the surface of the alloy. The oxidation treatment is carried out by dipping the alloy in an acid aq. soln. containing 50 to 70 wt.% of phosphoric acid, 1 to 5 wt.% nitric acid at 80 to 100 deg.C for 1 to 10 min. The cleaning treatment with water after the oxidation is preferably carried out by dipping the alloy in warm pure water at <=50 deg.C for 1 to 30 min.
申请公布号 JP2000199079(A) 申请公布日期 2000.07.18
申请号 JP19980377147 申请日期 1998.12.28
申请人 ULVAC JAPAN LTD;SANAI PLANT KOGYO KK 发明人 SUMIYA SAKAE;TSUKAHARA SONOKO;SAITO KAZUYA;NOMURA TAKESHI;ISHIZAWA KATSUOSA;KANAZAWA MINORU
分类号 C23C30/00;(IPC1-7):C23C30/00 主分类号 C23C30/00
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