发明名称 SPUTTERING METHOD AND SPUTTERING DEVICE
摘要 PROBLEM TO BE SOLVED: To efficiently form a film having desired film quality performance. SOLUTION: In the case plasma is generated on the space between a film forming object arranged in a treating chamber fed with prescribed gas and a target to form a film on the surface of the film forming object, the film forming object is previously fitted to a prescribed fitting object, a treating object in a state in which the film forming object is fitted to the fitting object is fixed to a prescribed position in the treating chamber, and, by plasma generated on the space between the film forming object in the treating object and the target arranged at a prescribed position in the treating chamber separated from the film forming object by prescribed intervals and also so as to be confronted with each other, a film is formed on the surface of the film forming object.
申请公布号 JP2000199059(A) 申请公布日期 2000.07.18
申请号 JP19990001360 申请日期 1999.01.06
申请人 SONY CORP 发明人 KITAGAWA KOJI
分类号 C08J7/06;C23C14/34;C23C14/54;G02F1/1333;(IPC1-7):C23C14/34;G02F1/133 主分类号 C08J7/06
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