| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor memory device provided with CMOSs to be enhanced in wiring density and minituarization. SOLUTION: A semiconductor memory device (SRAM) includes memory cells which comprise two load transistors Q1 and Q2, two drive transistors Q3 and Q4, and to transfer transistors Q5 and Q6. SRAM cells comprise a semiconductor substrate 10 where transistors Q1 to Q6 are formed, a first interlayer insulating layer 11 formed on the semiconductor substrate 10, first contacts C1 to C10 formed on the first interlayer insulating layer 11, and first wiring layers (node wiring layers 70A and 70B, pad layers 100P1 to 100P6). The first contacts and the first wiring layers are provided with high-melting metal layers and high-melting metal nitride layers. |
