| 摘要 |
PROBLEM TO BE SOLVED: To double the resolution of a resist pattern in spite of the use of an ordinary resist. SOLUTION: A resist film 12 is formed on an antireflection film 11 formed on an Si wafer 10, and the resist film 12 is patternwise exposed through a mask 14 for exposure having an L/S pattern. The exposed resist film 12 is developed with an alkali developer such that the film 12 gives a positive pattern, and then the resist film 12 is developed with such an organic solvent that the film 12 gives a negative pattern. Only the medium exposure region of the resist film 12 is left, and the objective L/S pattern whose pitch is half that of the mask pattern is formed. |
