发明名称 |
Vertical device formed adjacent to a wordline sidewall and method for semiconductor chips |
摘要 |
A semiconductor device includes a substrate forming a trench, the trench including a storage node disposed within the trench. A wordline is disposed within the substrate and adjacent to a portion of the substrate. A vertically disposed transistor is included wherein the wordline functions as a gate, the storage node and a bitline function as one of a source and a drain such that when activated by the wordline the transistor conducts between the storage node and the bitline. The invention further includes a method of fabricating the semiconductor device with vertical transistors.
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申请公布号 |
US6091094(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19980095793 |
申请日期 |
1998.06.11 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
RUPP, THOMAS S. |
分类号 |
H01L21/82;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119;H01L21/824 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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