发明名称 |
Ion-implantation assisted wet chemical etching of III-V nitrides and alloys |
摘要 |
A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.
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申请公布号 |
US6090300(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19980084223 |
申请日期 |
1998.05.26 |
申请人 |
XEROX CORPORATION |
发明人 |
WALKER, JACK;GOETZ, WERNER;JOHNSON, NOBLE M.;BOUR, DAVID P.;PAOLI, THOMAS L. |
分类号 |
H01L33/00;H01S5/20;H01S5/323;(IPC1-7):H01L21/311;B44C1/22 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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