发明名称 |
Potential detecting circuit and semiconductor integrated circuit |
摘要 |
A constant current source (1) is provided between a power supply (VCC) and an intermediate node (N1) and supplies a reference current (IR) which is a constant current between the power supply (VCC) and the intermediate node (N1). A variable resistor (2) is provided between the intermediate node (N1) and a comparison potential (VL) and its resistance value can be set to a desired value. A current flowing in the variable resistor (2) is a comparison current (IC). An amplifier (3) has an input connected to the intermediate node (N1) and amplifies a potential from the intermediate node (N1) to output a level detection signal (GE). Having this configuration, a potential detecting circuit which ensures a stable and controllable detection level is provided.
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申请公布号 |
US6091268(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19980055314 |
申请日期 |
1998.04.06 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OOISHI, TSUKASA;HIDAKA, HIDETO;ASAKURA, MIKIO |
分类号 |
G01R31/28;G01R19/165;G01R31/3185;G05F1/10;H03K5/08;(IPC1-7):H03K5/153 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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