发明名称 Potential detecting circuit and semiconductor integrated circuit
摘要 A constant current source (1) is provided between a power supply (VCC) and an intermediate node (N1) and supplies a reference current (IR) which is a constant current between the power supply (VCC) and the intermediate node (N1). A variable resistor (2) is provided between the intermediate node (N1) and a comparison potential (VL) and its resistance value can be set to a desired value. A current flowing in the variable resistor (2) is a comparison current (IC). An amplifier (3) has an input connected to the intermediate node (N1) and amplifies a potential from the intermediate node (N1) to output a level detection signal (GE). Having this configuration, a potential detecting circuit which ensures a stable and controllable detection level is provided.
申请公布号 US6091268(A) 申请公布日期 2000.07.18
申请号 US19980055314 申请日期 1998.04.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OOISHI, TSUKASA;HIDAKA, HIDETO;ASAKURA, MIKIO
分类号 G01R31/28;G01R19/165;G01R31/3185;G05F1/10;H03K5/08;(IPC1-7):H03K5/153 主分类号 G01R31/28
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