| 摘要 |
PROBLEM TO BE SOLVED: To precisely form a fine pattern, when silylation treatment is used for forming a semiconductor pattern. SOLUTION: A resist 2 to be silylated is applied on a substrate 1 which is to be worked, a surface film 3 is formed as a thin film to the top of the resist 2, and the resist 2 is silylated by allowing a silylating agent to permeate the thin film (surface film 3). Since the surface film 3 is formed on the resist 2 by coating and the resist 2 is silylated through the surface film 3, the atmospheric contamination of the surface of the resist to be silylated is appropriately controlled, and the swelling of the silylated layer is inhibited. |
