发明名称 CMP POLISHING DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the increase of a partial polishing amount and improve the flatness of a surface of a workpiece by providing a rotary surface plate part with a dummy member to form a surface to be polished, on an area where a polishing tool is partially deviated from the workpiece to be polished. SOLUTION: It is necessary that one of a polishing tool 24 and a wafer 21 is moved to obtain a state that a part of an outer diameter of the polishing tool 24 is deviated from an outer periphery of the wafer 21 when the whole surface of the wafer 21 is flattened by the polishing tool 24. On this occasion, a contact area of the polishing toll 24 with the wafer surface is decreased, and the polishing amount is partially increased. By mounting a dummy plate 1 on an outer peripheral part of the wafer 21, the decrease of the contact area of the polishing tool 24 with the wafer 21 surface can be compensated, and the partial increase of the polishing amount can be prevented. Whereby the dispersion of the removement polishing amount on the total wafer surface can be prevented, and the uniformity of the wafer surface can be improved. The dummy plate 1 is made of a material same as the workpiece.
申请公布号 JP2000198066(A) 申请公布日期 2000.07.18
申请号 JP19990002806 申请日期 1999.01.08
申请人 TOSHIBA MACH CO LTD 发明人 NISHIHARA HIROMI;KONDO HIROSHI
分类号 B24B37/07 主分类号 B24B37/07
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