发明名称 |
Semiconductor device including a crystalline silicon film |
摘要 |
A semiconductor device having a CMOS structure comprising N-channel type and P-channel type insulated gate semiconductor devices combined in a complementary manner, wherein the threshold voltage of the insulated gate semiconductor devices is controlled by using the difference in work function between the gate electrode and the active layer. The present semiconductor device has excellent uniformity and reproducibility.
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申请公布号 |
US6091115(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19970970728 |
申请日期 |
1997.11.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI, HISASHI;FUJIMOTO, ETSUKO |
分类号 |
H01L27/092;H01L21/8238;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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