| 摘要 |
PROBLEM TO BE SOLVED: To improve the breakdown strength characteristic without increasing a threshold voltage or an on-voltage even when a cell pitch is made fine, and prevent a variation of threshold voltage even when the semiconductor device is operated continuously at a high temperature. SOLUTION: In a manufacturing method, a semiconductor device includes a first semiconductor region 22 of a first conductivity type, a second semiconductor region 24 of a second conductivity type, a third semiconductor region 25 of the first conductivity type, a gate electrode 28 formed on a channel region of a surface layer part of the second semiconductor region 24, and a first electrode 30 having a contacted part with the third semiconductor region 25 and a titanium layer as a constituent element. After the first semiconductor region 22, the second semiconductor region 24, the third semiconductor region 25, an insulating film 27, the gate electrode 28, and the first electrode 30 are formed, an irradiation step with an electron beam, particle beam, or X-ray and a heat treatment step are carried out to control the threshold voltage.
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