| 摘要 |
PROBLEM TO BE SOLVED: To make a sealing gas emitting plate for a process gas hard to be clogged and to form a CVD film having excellent in-plane uniformity on a wafer. SOLUTION: The atmospheric pressure CVD system comprises a gas injector for purging a process gas toward a wafer, and a process chamber having a gas seal mechanism 60 for sealing the process gas purged from the gas injector, and forms a CVD film on the wafer under atmospheric pressure. By setting the thickness T of a porous plate provided on a gas emitting plate 61 of the mechanism 60 of this system to 0.4 mm, the opening diameter of gas emitting nozzles provided in the porous plate is increased and their opening pitch is decreased, thereby preventing their clogging. This stabilizes process gas flows, thereby allowing a CVD film exhibiting excellent in-plane uniformity to be formed on the wafer. A first N2 gas supply tube 26A and a second N2 gas supply tube 40A are connected and fixed to each other by a fitting 76. As a result, there occurs no such N2 gas leakages as conventionally encountered.
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