| 摘要 |
Disclosed is a semiconductor device having an enhanced current amount ratio, and a manufacturing method thereof. The semiconductor device includes a first transistor and a second transistor. There is a selective electric current capacity difference between the first transistor and the second transistor, wherein a gate degeneracy of the first transistor is different from a gate degeneracy of the second transistor. Among the first and second transistors, the gate degeneracy of the transistor requiring a small amount of current is higher than the gate degeneracy of the transistor requiring a large amount of current.
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