发明名称 Electron beam exposure mask and method of manufacturing the same and electron beam exposure method
摘要 In an exposure mask of the present invention, a plurality of opening regions are disposed via crossbeams, each having a size not to be resolved, along peripheral edges of island-like patterns and peninsula-like patterns for shielding transmission of charged particles.
申请公布号 US6090527(A) 申请公布日期 2000.07.18
申请号 US19980087869 申请日期 1998.06.01
申请人 FUJITSU LIMITED 发明人 YAMAZAKI, SATORU;SAKAMOTO, KIICHI;YASUDA, HIROSHI;SAKAKIBARA, TAKAYUKI;SAGOH, SATORU
分类号 G03F1/16;G03F7/20;H01J37/317;(IPC1-7):G03F9/00;G03C5/00 主分类号 G03F1/16
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