发明名称 |
Voltage generating circuit for semiconductor integrated circuit device |
摘要 |
A semiconductor integrated circuit includes a node for the power supply voltage for array that is connected to a sense amplifier, a decoupling capacitance connected to the node for the power supply voltage for array, a voltage-down converter connected to the node for the power supply voltage for array and generating a largest voltage stored in a memory cell, and two voltage-down converters connected to the node for the power supply voltage for array and generating a voltage higher than the largest voltage, and boosts the voltage of the node for the power supply voltage for array to attain a voltage higher than the largest voltage in the stand-by state and activates the voltage-down converter generating the largest voltage in operation.
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申请公布号 |
US6091648(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19980145141 |
申请日期 |
1998.09.01 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FURUTANI, KIYOHIRO;MITSUI, KATSUYOSHI |
分类号 |
G11C11/413;G05F1/56;G11C5/14;G11C7/06;G11C11/407;G11C11/409;H01L21/8242;H01L27/108;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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