发明名称 Voltage generating circuit for semiconductor integrated circuit device
摘要 A semiconductor integrated circuit includes a node for the power supply voltage for array that is connected to a sense amplifier, a decoupling capacitance connected to the node for the power supply voltage for array, a voltage-down converter connected to the node for the power supply voltage for array and generating a largest voltage stored in a memory cell, and two voltage-down converters connected to the node for the power supply voltage for array and generating a voltage higher than the largest voltage, and boosts the voltage of the node for the power supply voltage for array to attain a voltage higher than the largest voltage in the stand-by state and activates the voltage-down converter generating the largest voltage in operation.
申请公布号 US6091648(A) 申请公布日期 2000.07.18
申请号 US19980145141 申请日期 1998.09.01
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 FURUTANI, KIYOHIRO;MITSUI, KATSUYOSHI
分类号 G11C11/413;G05F1/56;G11C5/14;G11C7/06;G11C11/407;G11C11/409;H01L21/8242;H01L27/108;(IPC1-7):G11C7/00 主分类号 G11C11/413
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