发明名称 High speed semiconductor memory apparatus including circuitry to increase writing and reading speed
摘要 A semiconductor memory apparatus with a memory array, a first global bit line connected to a sense amplifier, a second global bit line connected to a write amplifier, and a selection circuit for connecting a plurality of bit lines selectively to the first global bit line and the second global bit line.
申请公布号 US6091629(A) 申请公布日期 2000.07.18
申请号 US19970906883 申请日期 1997.08.06
申请人 HITACHI, LTD. 发明人 OSADA, KENICHI;HIGUCHI, HISAYUKI;ISHIBASHI, KOICHIRO
分类号 G11C11/413;G06F12/08;G11C7/06;G11C7/18;G11C11/401;G11C11/41;H01L21/8244;H01L27/11;(IPC1-7):G11C11/00 主分类号 G11C11/413
代理机构 代理人
主权项
地址