Method for forming a semiconductor device structure having a laser portion
摘要
A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active region of the laser. The layer and RFM facets were formed using an in-situ multistep reactive ion etch process.
申请公布号
US6090635(A)
申请公布日期
2000.07.18
申请号
US19990329133
申请日期
1999.06.09
申请人
GTE LABORATORIES INCORPORATED
发明人
ROTHMAN, MARK ALAN;SHIEH, CHAN-LONG;ARMIENTO, CRAIG ALFRED;THOMPSON, JOHN ALVIN;NEGRI, ALFRED JOSEPH