发明名称 Method for forming a semiconductor device structure having a laser portion
摘要 A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active region of the laser. The layer and RFM facets were formed using an in-situ multistep reactive ion etch process.
申请公布号 US6090635(A) 申请公布日期 2000.07.18
申请号 US19990329133 申请日期 1999.06.09
申请人 GTE LABORATORIES INCORPORATED 发明人 ROTHMAN, MARK ALAN;SHIEH, CHAN-LONG;ARMIENTO, CRAIG ALFRED;THOMPSON, JOHN ALVIN;NEGRI, ALFRED JOSEPH
分类号 G02B6/30;G02B6/42;(IPC1-7):H01L21/00 主分类号 G02B6/30
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