发明名称 |
MIS SOI semiconductor device with RTD and/or HET |
摘要 |
The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO2 type quantum device can be manufactured with ease at a low cost.
|
申请公布号 |
US6091077(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19970955267 |
申请日期 |
1997.10.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MORITA, KIYOYUKI;MORIMOTO, KIYOSHI;YUKI, KOICHIRO;ARAKI, KIYOSHI |
分类号 |
H01L21/762;H01L21/84;H01L27/12;H01L29/76;H01L29/88;(IPC1-7):H01L29/88;H01L29/06 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|