FEA ADJUSTED BY INCORPORATED MOSFET AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A field emission array controlled by an MOSFET(Metal Oxide Field Effect Transistor) and a method for manufacturing the same are provided to improve uniformity and stability of a discharging current by interconnecting a cathode electrode with a field emission array. CONSTITUTION: The first doping silicon layer and the second doping silicon layer(422) are formed on a silicon substrate(41). A buffer oxide layer is formed on the silicon substrate(41). A silicon nitride layer is formed on the buffer oxide layer. A disc is formed on the silicon substrate(41) by patterning the silicon nitride layer. A doping channel(423) is formed on the silicon substrate(41). A gate oxide layer is formed by oxidizing the buffer oxide layer. A gate hole(422) is formed by etching the first doping silicon layer. A metal layer is formed on the silicon substrate(41). An isolation layer is formed on silicon substrate(41). An emitter tip(470) is formed on silicon substrate(41). A field emission array gate electrode and an MOSFET gate electrode are formed thereon.