METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the reliability of the semiconductor device and to achieve the high integration of the semiconductor device by allowing a word line spacer to have a sufficient thickness. CONSTITUTION: A gate electrode formed with a mask insulating layer pattern is formed on a semiconductor substrate(11). The first insulating layer is formed on the structure. The first photoresist film pattern is formed on the first insulating layer. Then, the first insulating layer spacer is formed at a sidewall of the gate electrode. After that, the first photoresist film pattern is removed. A source/drain(14) is formed by performing an ion implantation process with respect to both sides of the gate electrode. A bit line contact plug(25a) and a storage electrode contact plug(25b) are formed on a cell area of the semiconductor substrate(11). After forming the second photoresist film pattern, a spacer is formed at the sidewall of the gate electrode.