FABRICATION METHOD OF DRAM

摘要

PURPOSE: A fabrication method of DRAM is provided to reduce metal contact etching target against active areas to decrease the loss of the active area due to over-etching and form a capacitor contact plug in one time. CONSTITUTION: A fabrication method of DRAM comprises steps of: forming a conductive layer on a substrate; patterning the conductive layer to form bit lines; forming an insulation film on the substrate; selectively etching the insulation film to form a bit line contact area; forming a bit line contact plug within the contact area; etching the insulation film instead of constant thickness; forming spacers on sides of the exposed contact plug; and depositing silicon on the substrate.