FORMING METHOD OF POLYSILICON PLUG FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A forming method of polysilicon plug for semiconductor device is provided to remove polysilicon grains generated during chemical mechanical polishing and minimize erosion and dishing phenomenon within cell areas. CONSTITUTION: A forming method of polysilicon plug for semiconductor device comprises: a first step forming an interlayer insulation oxide film on a substrate; a second step selectively etching the interlayer insulation oxide film to form a contact hole; a third step forming a polysilicon film on overall structure; a forth step chemically mechanically polishing the polysilicon film using slurry for polishing polysilicon to expose the interlayer insulation oxide film; and a fifth step removing polysilicon grains residue after the forth step.