METHOD FOR FORMING ALIGN KEY OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an align key of a semiconductor device is provided to prevent a crack of an insulating layer around the align key pattern. CONSTITUTION: When an align key pattern is formed in a peripheral circuitry region, the align key pattern is subjected to an excessive thermal or mechanical stress in the following thermal process due to a rectangular shape thereof. Therefore, a ring-shaped buffer pattern(D1) is additionally formed around the align key pattern. The ring-shaped buffer pattern(D1) not only isolates the align key pattern from all external influence, but also disperses the stress. Accordingly, the internal stress of the insulating layer may not converge into edges of the align key pattern. The buffer pattern may have a different shape instead of the ring shape. For example, a plurality of circular patterns(D2) enclosing the align key pattern are possible.