| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent void from being generated when evaporating in a minute space, by evaporating an oxidation layer for isolation, and by forming an active region and an isolation layer by using a dry-etching method and a selective epi-growth method. CONSTITUTION: A method for manufacturing a semiconductor device comprises the steps of: selectively forming an oxidation layer for isolation and a nitride layer on a silicon substrate; forming an isolation layer by sequentially etching the nitride layer and the oxidation layer for isolation, so as to expose a predetermined region of the silicon substrate; growing a silicon layer on the exposed silicon substrate; and forming an interlayer dielectric on the entire surface, and forming a contact hole in the dielectric layer to expose the silicon layer.
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