| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to adjust a reaction between metal and a semiconductor substrate by only heat treatment to inject dopants in the substrate. CONSTITUTION: A method for forming a contact of a semiconductor device comprises forming a layer-insulating layer(12) on a semiconductor substrate(11), forming a contact hole(13) in the layer-insulating layer(12), depositing a semi-stable compound(14), injecting dopants in the compound, forming a metal layer(15) and a diffusion barrier layer, and forming a stable compound(16) by heat treatment, wherein an epitaxial layer grows on the semiconductor substrate(11) below the stable compound(16) and an ohmic contact(16) is formed by injecting dopants in the epitaxial layer at the same time.
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