| 摘要 |
PURPOSE: A method for manufacturing a cell capacitor of a dynamic random access memory(DRAM) is provided to prevent a bridge, caused by a broken-off hemispherical grain(HSG), between adjacent cylindrical storage nodes in a succeeding process while securing surface area of a storage node. CONSTITUTION: A method for manufacturing a cell capacitor of a dynamic random access memory(DRAM) comprises the steps of: forming a contact plug within a dielectric insulation layer formed on a semiconductor substrate; forming an etching blocking layer on the dielectric insulation layer including the contact plug; forming a sacrificing layer on the etching blocking layer; etching the sacrificing layer and the etching blocking layer to form a cylindrical opening within the sacrificing layer by using a reverse pattern as a mask until the surface of the contact plug is exposed; forming a conductive layer along the upper part of the sacrificing layer and the sidewalls and bottom surface of the opening; forming a void cylindrical storage node electrically connected to the contact plug, by eliminating the conductive layer until the surface of the sacrificing layer is exposed; forming a hemispherical grain(HSG) layer on the inner surface of the cylindrical storage node; forming a material layer on the entire surface of the semiconductor substrate, in which the material layer is selectively formed on the HSG layer having no incubation time; and eliminating the sacrificing layer on both sides of the storage node by using the etching blocking layer as a stopping layer.
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