| 摘要 |
PURPOSE: A MOS transistor having a metal silicide layer and a fabricating method thereof are provided to prevent junction leakage current and to reduce gate contact resistance. CONSTITUTION: To form a MOS transistor, an active region is defined between field oxide layers(104) formed on a semiconductor substrate(102). In the active region, a gate oxide layer(106) and a gate(108) are centrally formed on the substrate(102), and source/drain regions(110,114) are peripherally formed in the substrate(102) around the gate(108). In addition, a first insulating layer(111S) and a spacer(112S) are formed enclosing the gate(108) but exposing upper portions of the gate(108). Moreover, a metal silicide layer(116) is formed covering the source/drain regions(110,114) and capping the upper portions of the gate(108). The silicide layer(116) on the gate(108) is somewhat extended to the sides of the gate(108), so that contact area between the silicide layer(116) and the gate(108) is increased and thereby gate contact resistance is reduced.
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