| 摘要 |
PURPOSE: A process chamber is provided to remove impurities produced in sputtering process on a semiconductor substrate. CONSTITUTION: A wafer(208) is fixed on a lower electrode(206). A voltage is applied to a upper electrode(210) and the lower electrode(206). Argon gas is injected through a power supplier(202) and the gas is ionized. The ionized gas is accelerated and smashed with a target on the upper electrode(210). A target material is extracted from the target. A thin film is created by the target material on the wafer(208). Impurities produced during sputtering process are ejected through an exhaust port(204) During the sputtering process or after the process, a moving axis rotates and the lower electrode(206) is inclined at designated degrees. A gun(230) moves to proper position and sprays purgation gas on the wafer(206). By the purgation gas, the impurities on the wafer are removed. A MFC(230) controls amount of the purgation gas.
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