METHOD OF METALIZING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method of metalizing semiconductor devices is provided to prohibit a grooving occurrence by forming the first reflowing metal layer and the second laminating metal layer, CONSTITUTION: A method of metalizing semiconductor devices consists of the following steps: a step to form a glue metal layer on a dielectric substrate; a step to form the first metal layer on the glue metal layer under low temperature; a step to reflow the particles of the metal layer through heat-treating the first metal layer at the below temperature of its melting point; and a step to form the second metal layer on the second metal layer getting reflow, and then to form the metal distribution layers of the first and second laminated metal layer getting reflow.