CHEMICAL MECHANICAL POLISHING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A chemical mechanical polishing method of a semiconductor device is to prevent a mobile ion from penetrating in a word line or a silicone substrate by depositing a borophosphosilicate glass(BPSG) film on the word line. CONSTITUTION: An interlayer dielectric film(3) is deposited on a semiconductor substrate(1) with a word line(2) being formed. A BPSG film(4) is formed on is formed on the interlayer film in a thickness of 100 to 500 Armstrong, and is annealed in a furnace at a temperature of 700 to 850°C, to prevent the movement of a mobile ion and obtain a gap burying characteristics. A high density plasma undoped silicate glass film(6) is deposited on the BPSG film in a thickness of 5000 to 10000 Angstrong, and is polished by a chemical mechanical polishing.