METHOD FOR FABRICATING CAPACITOR WHICH CAN PREVENT OXIDATION OF BOTTOM ELECTRODE

摘要

PURPOSE: A method for fabricating a capacitor is provided which can prevent the oxidation of a bottom electrode and can prevent the reduction of charge storage capacity of the capacitor by suppressing the oxidation of a bottom electrode effectively. CONSTITUTION: A method for fabricating a capacitor prevents the oxidation of a bottom electrode by nitrifying the surface of the bottom electrode without being revealed in the air after removing a natural oxide(24) generated on the surface of the polysilicon bottom electrode revealed in the air completely using inactive gas plasma such as hydrogen or Ar and He. The method includes the steps of: forming a polysilicon bottom electrode(23); removing the natural oxide formed on the bottom electrode by performing plasma treatment; forming a nitride film(25) on the surface of the bottom electrode by performing a nitrogen plasma process without being revealed in the air; forming a dielectric film on the nitride film; and forming a top electrode on the dielectric film.