METHOD OF MANUFACTURING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a gate electrode of a semiconductor device is to form a low resistance tungsten silicide gate electrode in a highly-integrated device by solving the problems of an etch process in a gate electrode formation using a low resistance tungsten silicide. CONSTITUTION: A method of manufacturing a gate electrode of a semiconductor device comprises the steps of: a gate oxide layer(2), an amorphous silicon layer(3) and a tungsten silicide layer(4) on a semiconductor substrate(1) sequentially; annealing the amorphous silicon layer and the tungsten silicide layer with a rapid thermal treatment(RTP) spike; forming a mask oxide layer(5) on the tungsten silicide layer with the mask oxide layer patterned with a gate electrode pattern; etching the tungsten silicide layer, the amorphous silicon layer, and the gate oxide layer using the mask oxide layer; and forming an oxide layer(6) on the side wall of the gate electrode formed by the above steps.