SEMICONDUCTOR DEVICE INCLUDING THIN FILM TRANSISTOR

摘要

PURPOSE: A semiconductor device including a thin film transistor(TFT) is provided to prevent degradation of efficiency caused by a metal line in hydrogenating a polysilicon layer for a channel of a TFT, by modifying a layout of the metal line adjacent to the TFT. CONSTITUTION: A semiconductor device comprises a thin film transistor and a metal line. The thin film transistor is disposed on a predetermined substrate. The metal line is disposed in parallel with the thin film transistor, overlapped with the thin film transistor, while being disposed to bypass a channel region of the thin film transistor. The metal line is also most adjacent to an upper part of the thin film transistor.