ERROR CORRECTION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE

摘要

An error correction/detection circuit including a syndrome generating circuit for generating a syndrome from information data and check data input in a first cycle; and an error position/size calculating circuit for calculating a position and a size of an error from said syndrome; and an error correction circuit for correcting an error for at least information data input in a second cycle on a basis of the position and the size of the error obtained in said error position/size calculating circuit and for outputting at least error-corrected information data.