FABRICATION METHOD OF CONTACTS FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of contacts for semiconductor device is provided to simultaneously etch an oxide layer and a nitride layer without separate other process to simplify process, and to reduce the short-circuit ratio between lines to increase productivity of the device. CONSTITUTION: A fabrication method of contacts for semiconductor device comprises steps of: sequentially forming word lines and an oxide layer pattern for a hard mask on a silicon substrate; forming a nitride layer; sequentially forming a BPSG film and a photoresist pattern for a contact mask on the nitride layer; and simultaneously removing the BPSG film and the bottom of the nitride layer to form a contact hole.