METHOD FOR FORMING A WIRE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A wire formation method is provided to simplify the manufacturing process by forming the wire buried into an insulating layer. CONSTITUTION: An insulating layer(13) and an etching blocking layer(14) are successively formed on a semiconductor substrate(11) having a conductive region(12). The etching blocking layer(14) has different etching selectivity compared to the insulating layer(13). Then, the etching blocking layer(14) is etched using a photoresist pattern(PR11) and the photoresist pattern(PR11) is removed. An insulating layer(15) is formed on the resultant structure and the insulating layers(15,13) are etched using a photoresist pattern(PR12) having wider width compared to the photoresist pattern(PR11), thereby forming a contact hole(16) exposed the conductive region(12). A metal film(17) is deposited and filled into the contact hole(16).