GATE FLASH CELL AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A gate flash cell and a fabricating method thereof are provided to realize a fast read operation and the high integration of semiconductor devices by reducing the resistance of word lines and increase the number of rewrite operation by attaching two erase gates to one cell. CONSTITUTION: Erase gates(315) are respectively inserted between control gates(310,312) for minimizing the increase of cell area due to adding the erase gate. The respective erase gates(315) are adjacent through a floating gate(38) and an inter poly oxide film(314) of adjacent two cells. The erase gates utilizes the same poly-poly erase method as prior method. But, the difference from the prior method is that the erase operation is performed from both sides because the erase gates are positioned on both sides of one floating gate.