| 摘要 |
PURPOSE: A substrate structure of LCD and manufacturing method thereof don't form an insulator layer in the boundary between a metal layer and a conductive layer. CONSTITUTION: The second metal layer of Mo, W or Ta is laminated on the first metal layer of Cr metal layer. A passivation layer(155) of SiNx, SiOx or BCB is coated in the front surface of a substrate. A contact hole is formed in the passivation layer(155) to contact a gate pad, a data pad and a drain electrode(172) of a switching element with a conductive layer of ITO. The contact hole is formed by the etching method using a plasma gas of SF6/O2 or CF4/O2. The surface of the second metal layer is exposed in the lower of the contact hole, and the second metal layer doesn't form an insulator layer because the surface is etched by the plasma gas of SF6/O2 or CF4/O2. Therefore, the ohmic contact isn't formed in the boundary between the second metal layer and the conductive layer.
|
