METHOD FOR MANUFACTURING TRIPLE WELL OF SEMICONDUCTOR ELEMENT

摘要

PURPOSE: A method for manufacturing a triple well of a semiconductor element is provided to reduce a current leakage and to ensure a sufficient thermal budget by performing a heat treatment process after an ion implantation process has been finished. CONSTITUTION: A first deep conductive well ion implantation area(44) is formed on a semiconductor substrate(51). Impurities in the first deep conductive well ion implantation area(44) are activated by a rapid heat treatment. Then, a first conductive impurity ion implantation area is formed. After that, a second conductive impurity ion implantation area is formed. Finally, the impurities implanted into the semiconductor substrate(51) are activated by a furnace heat treatment.