METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for producing a semiconductor device is to shorten a process time by simultaneously removing and washing a silicide layer in a pattern-removal process and to improve productivity by reducing use amount of chemical. CONSTITUTION: A method for producing a semiconductor device comprises the steps of: forming a word line having a polysilicon layer and a silicide layer on the polysilicon layer on a semiconductor substrate; depositing an interlayer insulation film on the semiconductor substrate including the word line and then forming a pattern of photosensitive film having an opening corresponding to a contact hole for exposing the silicide layer on the interlayer insulation film; exposing the silicide layer by using a pattern of the photosensitive film as a mask; a step of accomplishing in-situ a process of removing the pattern of the photosensitive film, a process of etching and washing the silicide layer and a process of removing a natural oxidization film present in the contact hole; and contacting the polysilicon layer of the bit line with the polysilicon layer of the word line.