METHOD FOR FORMING ALUMINUM METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming aluminum metal wiring of semiconductor device is provided to reduce scratch on an aluminum layer by chemical mechanical polishing process, thereby enhancing stability, reliability and productivity. CONSTITUTION: A method for forming aluminum metal wiring of semiconductor device comprises steps of: providing a semiconductor substrate of which damascene patterns are formed on an interlayer insulation film; forming a barrier metal layer and an aluminum layer on the insulation film; polishing the aluminum layer into constant thickness by primary chemical mechanical polishing process; oxidizing the aluminum layer to form a passivity film; and polishing the passivity film and the barrier metal layer to form aluminum metal wring.