FABRICATION METHOD OF FLASH MEMORY CELL

摘要

PURPOSE: A fabrication method of flash memory cell is provided to prevent over-etching of device division areas, thereby enhancing the reliability of the device. CONSTITUTION: A fabrication method of flash memory cell comprises steps of: forming device division areas having constant gap on a substrate in one direction; forming a tunneling oxide film on the substrate; stacking a polysilicon layer and a first insulation layer, and then selectively removing the layers by wet-etching process to form polysilicon lines between the device division areas; removing the first insulation layer and then forming a second insulation layer of ONO structure; forming/patterning a polysilicon layer on the second insulation layer to form control gates crossing to the division areas; and forming floating gates.