| 摘要 |
PURPOSE: A mask to form a fine pattern is provided which is appropriate for assuring a process tolerance and for preventing a pattern defect. CONSTITUTION: A mask to form a fine pattern is provided which is appropriate for assuring a process tolerance and for preventing a pattern defect by reducing a focus depth. In a photoresist film(33), which is deposited with a step on a wafer, the mask to form a fine pattern comprises a chrome film(32) which is formed on a front surface of a crystal substrate(31) in order for the crystal substrate to be revealed, and the crystal substrate whose back surface is etched in inverse proportional to the step of the photoresist film. According to the method for forming the fine pattern, the chrome film is deposited on the crystal substrate, and the chrome film is formed which has a fixed pattern for the crystal substrate to be revealed. Then, the back surface of the crystal substrate is etched with a different depth.
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