| 摘要 |
PURPOSE: A method for fabricating an overlay vernier of a semiconductor device is provided to prevent lifting of an overlay vernier to improve property and reliability of the device. CONSTITUTION: A method for fabricating an overlay vernier of a semiconductor device comprises forming a planarization layer(22), a bonding layer, a layer(24) for a lower electrode, a ferroelectric layer(25), and a layer(26) for an upper electrode on a scribe lane, forming an upper electrode by using an upper electrode mask with a square, transparent window at a central region, etching the ferroelectric layer(25), the layer(24) for a lower electrode and the bonding layer by using a lower electrode mask, forming an interlayer insulating layer, forming a photoresist pattern by using a photomask(29) with a transparent cross window at a central region, forming a overlay vernier by etching the interlayer insulating layer, removing the photoresist pattern, and cleaning the semiconductor device.
|
