METHOD OF MANUFACTURING POLYCIDE GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a polycide gate electrode of a semiconductor device is to improve a roughness of an interface of a silicide/polysilicon. CONSTITUTION: A method of manufacturing a polycide gate electrode of a semiconductor device comprises steps of: forming a gate dielectric film(31) on a semiconductor substrate(30); forming a polysilicon film(32) on the gate dielectric film; nitrifying a surface of the polysilicon film; forming a silicide film on the nitrified surface of the polysilicon; and etching the polysilicon film to pattern the gate electrode. The step of nitrifying a surface of the polysilicon film is achieved by implanting a nitrogen ion onto the surface of the polysilicon. The step of nitrifying a surface of the polysilicon film is achieved by annealing the polysilicon under an atmosphere of N2 gas, after the step of forming a polysilicon film.