METHOD FOR DIVIDING TRENCH DEVICE IN SEMICONDUCTOR

摘要

PURPOSE: A method for dividing trench device in semiconductor is provided to prevent the separation of boron by forming a barrier layer and the moat phenomenon inducing electric field focusing phenomenon by rounding the corner of a trench, thereby preventing the lowering of threshold voltage. CONSTITUTION: A method for dividing trench device in semiconductor comprises steps of: selectively etching a portions of a silicon substrate to form the trench on the device division area; forming an insulation film on internal wall of the trench; forming a barrier layer on the substrate contained the trench internal wall; embedding the insulation film into the trench; and oxidizing both top edges of the barrier layer by Vt screen oxidization process.