METHOD FOR FABRICATING TANTALUM OXIDE FILM CAPACITOR USING PLASMA CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: A method for fabricating a Ta2O5 film capacitor using PECVD(Plasma Chemical Vapor Deposition) method is provided which can reduce the process steps and can crystallize the Ta2O5 film in a relatively low temperature. CONSTITUTION: A method for fabricating a Ta2O5 capacitor using PECVD removes impurities in a Ta2O5 film at a temperature lower than in a diffusion furnace and at the same time crystallizes the Ta2O5 film, by performing Ta2O5 treatment using plasma energy by controlling the chamber temperature and the plasma density adequately using a PECVD chamber after forming the Ta2O5 film. The method includes the steps of: forming a bottom electrode(1); forming an amorphous Ta2O5 film(3A) on the bottom electrode; treating the Ta2O5 film in the oxygen atmosphere; removing impurities in the Ta2O5 film and at the same time crystallizing the amorphous Ta2O5 film by thermally processing the Ta2O5 and at the same time plasma processing; and forming a top electrode(4) on the Ta2O5.