| 摘要 |
PURPOSE: A method for fabricating a transistor is provided to prevent short-channel effect and the degradation of current drive characteristics by forming a transistor having asymmetrical drain structure. CONSTITUTION: First, a mask layer is formed on a first conduction type active layer(25) isolated from a substrate(21) by an embedded insulating layer(23). Then, a drain area is defined by patterning the mask layer and active layer, and a sidewall(29) exposing the active layer is formed on the side of the active layer. Next, polysilicon(31) is deposited on the drain area to form a polysilicon layer. Then, the mask layer is moved, a gate oxide film is formed on the active layer, and a gate(35) is formed on the gate oxide film on the side of the polysilicon layer. Next, a source/drain area(37) is formed by doping second conduction type impurities into the active layer and polysilicon layer using the gate as a mask.
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