| 摘要 |
PURPOSE: A method of manufacturing a field oxidation film is provided to prevent the decrease of effective channel width by forming a nitride film spacer on sidewalls of a nitride film pattern to previously assure the effective channel width. CONSTITUTION: First, a pad oxidation film is formed on a silicon substrate(10). Then, a first nitride film pattern of a thermal oxidation mask for device isolation is formed on the pad oxidation film. Next, a second nitride film is formed on all surface of the resultant structure, and a second nitride film spacer(3) of a predetermined width is formed on sidewalls of the first nitride film pattern by etching the second nitride film. Then, the substrate(10) is exposed by removing the exposed pad oxidation film. Next, a field oxidation film(4) is formed by the thermal oxidation of the exposed silicon substrate(10). Finally, the first nitride film pattern and the second nitride film spacer are removed.
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